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| AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53m -5A SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 +20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200810075 AP4953GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V o Min. -30 -1 - Typ. 5 8 1.7 4.5 6.7 10 21 10 595 80 75 Max. Units 53 90 -3 -1 -25 +100 15 952 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V VGS=+20V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. - Typ. 18 11 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4953GM 40 40 T A =25 C -ID , Drain Current (A) o -ID , Drain Current (A) 30 -10V -7.0V -5.0V -4.5V T A =150 o C 30 -10V -7.0V -5.0V -4.5V 20 20 V G = -3.0V 10 V G = - 3.0 V 10 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.8 I D =-4A T A =25 RDS(ON) (m) 60 1.6 I D =-5A V G =-10V Normalized RDS(ON) 2 4 6 8 10 1.4 1.2 50 1.0 0.8 40 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 8.00 1.4 6.00 Normalized -VGS(th) (V) 1.4 1.2 -IS(A) T j =150 C 4.00 o T j =25 C o 1 0.8 2.00 0.6 0.00 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4953GM f=1.0MHz 14 1000 12 C iss -VGS , Gate to Source Voltage (V) 10 8 C (pF) I D = -5A V DS = -15V 100 C oss C rss 6 4 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty Factor = 0.5 10 100us 1ms -ID (A) 1 0.2 0.1 10ms 100ms 1s 0.1 0.05 PDM t 0.02 0.1 T Duty Factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse T A =25 C Single Pulse 0.01 0.1 1 10 o 0.01 DC 0.01 100 0.0001 Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters SYMBOLS MIN NOM MAX 8 7 6 5 E1 E A A1 B c D E E1 e 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.55 0.18 0.41 0.22 4.90 6.15 3.90 1.27 TYP 0.254 TYP 1.75 0.25 0.51 0.25 5.00 6.50 4.00 1 2 3 4 e B G L 0.38 0.00 4.00 0.90 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number 4953GM YWWSSS Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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